Search results

  • Full text

  • Document type

    • Publication year

  • Organisation

Results: 28
Number of items: 28
  • Thuy, N. P., Nong, N. V., Hien, N. T., Tai, L. T., Vinh, N. Q., Thang, P. D., & Brück, E. H. (2002). Magnetic properties and magnetocaloric effect of Tb5(SixGe1-x)4 compounds. Journal of Magnetism and Magnetic Materials, 242, 841-843. https://doi.org/10.1016/S0304-8853(01)01092-7
  • Gusev, O. B., Bresler, M. S., Pak, P. E., Yassievich, I. N., Forcales Fernandez, M., Vinh, N. Q., & Gregorkiewicz, T. (2002). Excitation cross section of erbium in semiconductor matrices under optical pumping. Diffusion and defect data, solid state data. Part B, Solid state phenomena, 82-84, 651-656.
  • Gusev, O. B., Bresler, M. S., Pak, P. E., Yassievich, I. N., Forcales Fernandez, M., Vinh, N. Q., & Gregorkiewicz, T. (2001). Excitation cross-section of erbium in semiconductor matrices under optical pumping. Physical Review B, 64, 075302.
  • Pawlak, B., Vinh, N. Q., Yassievich, I. N., & Gregorkiewicz, T. (2001). Influence of p-n junction formation at a Si/Si:Er interface on low temperature excitation of Er3+ ions in crystalline silicon. Physical Review B, 64, 132202.
  • Vinh, N. Q., Przybylinska, H., Krasil'nik, Z. F., Andreev, B. A., & Gregorkiewicz, T. (2001). Observation of Zeeman effect in photoluminescence of Er3+ ion in crystalline silicon. Physica B-Condensed Matter, 308, 340-343. https://doi.org/10.1016/S0921-4526(01)00693-7
  • Vinh, N. Q., Yassievich, I. N., & Gregorkiewicz, T. (2001). Erbium excitation across the bulk of silicon wafer: An Effect of p-n junction at Si/Si:Er interface. Physica B-Condensed Matter, 308, 357-360. https://doi.org/10.1016/S0921-4526(01)00699-8
  • Vinh, N. Q., Klik, M. A. J., & Gregorkiewicz, T. (2001). Time-resolved photoluminescence study of Si:Ag. Physica B-Condensed Matter, 308, 414-417. https://doi.org/10.1016/S0921-4526(01)00766-9
  • Forcales Fernandez, M., Klik, M. A. J., Vinh, N. Q., Bradley, I. V., Wells, J. P. R., & Gregorkiewicz, T. (2001). Free-electron laser studies of energy transfer mechanisms in semiconductors doped with Transition Series ions. Journal of Luminescence, 94, 243-248. https://doi.org/10.1016/S0022-2313(01)00287-3
Page 3 of 3