Search results
Results: 248
Number of items: 248
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Thao, D. T. X., Ammerlaan, C. A. J., & Gregorkiewicz, T. (1999). Photoluminescence mechanism of erbium in silicon, (boekdeel). In N. D. Chien, F. F. Bekker, J. J. M. Franse, T. D. Hien, N. T. Hien, & N. P. Thuy (Eds.), Trends in Materials Science and Technology (pp. 158-161). Hanoi National University Publishing House.
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Thao, D. T. X., & Gregorkiewicz, T. (1999). Influence of free-electron laser radiation on different Er-related centers in silicon, (boekdeel). In N. D. Chien, F. F. Bekker, J. J. M. Franse, T. D. Hien, N. T. Hien, & N. P. Thuy (Eds.), Trends in Materials Science and Technology (pp. 501-504). Hanoi National University Publishing House.
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Son, N. T., Hai, P. N., Gregorkiewicz, T., Ammerlaan, C. A. J., Lindström, J. L., Chen, W. M., Monemar, B., & Janzen, E. (1999). Electron Paramagnetic Resonance Studies of Defects in Electron-Irradiated p-type 4H and 6H SiC, (in: Phys B). Physica B-Condensed Matter, 273-274, 655-658. https://doi.org/10.1016/S0921-4526(99)00597-9
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Dirksen, R. J., Gregorkiewicz, T., & Ammerlaan, C. A. J. (1998). Individual thermal donor species studied with high-field magnetic resonance. Physica Status Solidi. B: Basic Research, 210, 539-544. https://doi.org/10.1002/(SICI)1521-3951(199812)210:2<539::AID-PSSB539>3.0.CO;2-9
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Pawlak, B. J., Gregorkiewicz, T., & Ammerlaan, C. A. J. (1998). Confinement Effects of Phosphorus Donors Embedded in Silicon Microcrystals. Physica Status Solidi. B: Basic Research, 210(2), 631-634. https://doi.org/10.1002/(SICI)1521-3951(199812)210:2<631::AID-PSSB631>3.0.CO;2-0
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Gregorkiewicz, T., Thao, D. T. X., Tsimperidis, I., Bekman, H. H. P. T., Langerak, C. J. G. M., Michel, J., & Kimerling, L. C. (1998). Excitation mechanism of Er in Si studied with a free-electron Laser. Journal of Luminescence, 80(1-4), 291-295. https://doi.org/10.1016/S0022-2313(98)00114-8
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Gregorkiewicz, T., Thao, D. T. X., & Langer, J. M. (1998). The Role of Shallow Bound States in Emission Processes of Rare-Earth Doped Semiconductors. Physica Status Solidi. B: Basic Research, 210, 737-745. https://doi.org/10.1002/(SICI)1521-3951(199812)210:2<737::AID-PSSB737>3.0.CO;2-9
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