Fast dynamics of 1.5 μm photoluminescence in Er-doped SiO2 sensitized with Si nanocrystals
| Authors | |
|---|---|
| Publication date | 2011 |
| Journal | Optical Materials |
| Volume | Issue number | 33 | 7 |
| Pages (from-to) | 1091-1093 |
| Organisations |
|
| Abstract |
In order to investigate origin of fast photoluminescence at 1.5 μm reported to appear in Er-doped SiO2 sensitized with silicon nanocrystals, time-resolved photoluminescence measurements were compared between high temperature annealed Er-doped and Er-free samples. We confirm that this fast photoluminescence band observed in our materials is due to radiative recombination of Er3+ ions. At low temperatures, also a contribution from defect related-emission centered around 1300 nm appears and adds up to the Er-related emission. |
| Document type | Article |
| Language | English |
| Published at |
https://doi.org/10.1016/j.optmat.2010.12.002
(Final published version)
|
| Permalink to this page | |