Fast dynamics of 1.5 μm photoluminescence in Er-doped SiO2 sensitized with Si nanocrystals
| Authors |
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| Publication date |
2011
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| Journal |
Optical Materials
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| Volume | Issue number |
33 | 7
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| Pages (from-to) |
1091-1093
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| Organisations |
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Faculty of Science (FNWI) - Institute of Physics (IoP) - Van der Waals-Zeeman Institute (WZI)
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| Abstract |
In order to investigate origin of fast photoluminescence at 1.5 μm reported to appear in Er-doped SiO2 sensitized with silicon nanocrystals, time-resolved photoluminescence measurements were compared between high temperature annealed Er-doped and Er-free samples. We confirm that this fast photoluminescence band observed in our materials is due to radiative recombination of Er3+ ions. At low temperatures, also a contribution from defect related-emission centered around 1300 nm appears and adds up to the Er-related emission.
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| Document type |
Article
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| Language |
English
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| Published at |
https://doi.org/10.1016/j.optmat.2010.12.002
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