Structural modification enhances the optoelectronic properties of defect blue phosphorene thin films

Authors
  • V.A. Dinh
Publication date 13-07-2022
Journal Journal of Physics Condensed Matter
Article number 285702
Volume | Issue number 34 | 28
Number of pages 11
Organisations
  • Faculty of Science (FNWI) - Institute of Physics (IoP) - Van der Waals-Zeeman Institute (WZI)
Abstract

Active enhancement of the optical absorption coefficient to improve the light converting efficiency of thin-film solar cell materials is crucial to develop the next-generation solar cell devices. Here we report first-principles calculations with generalized gradient approximation to study the optoelectronic properties of pristine and divacancy (DV) blue phosphorene (BlueP) thin films under structural deformation. We show that instead of forming sp-like covalent bonds as in the pristine BlueP layer, a DV introduces two particular dangling bonds between the voids. Using a microscopic (non-) affine deformation model, we reveal that the orbital hybridization of these dangling bonds is strongly modified in both the velocity and vorticity directions depending on the type of deformation, creating an effective light trap to enhance the material absorption efficiency. Furthermore, this successful light trap is complemented by a clear signature of σ + π plasmon when a DV BlueP layer is slightly compressive. These results demonstrate a practical approach to tailor the optoelectronic properties of low-dimensional materials and to pave a novel strategy to design functionalized solar cell devices from the bottom-up with selective defects.

Document type Article
Language English
Published at https://doi.org/10.1088/1361-648X/ac68be
Other links https://www.scopus.com/pages/publications/85130002636
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