Photoluminescence quenching of CdSe core/shell quantum dots by hole transporting materials

Authors
  • Y. Zhang
  • P. Jing
  • Q. Zeng
  • Y. Sun
  • H. Su
  • Y.A. Wang
  • X. Kong
  • J. Zhao
  • H. Zhang
Publication date 2009
Journal The Journal of Physical Chemistry. C
Volume | Issue number 113 | 5
Pages (from-to) 1886-1890
Organisations
  • Faculty of Science (FNWI) - Van 't Hoff Institute for Molecular Sciences (HIMS)
Abstract
Photoluminescence quenching of colloidal CdSe core/shell quantum dots (QDs) with CdS, ZnS and CdS/CdZnS/ZnS shells in the presence of hole-transporting materials (HTMs) is studied by means of steady-state and time-resolved photoluminescence spectroscopy. Static quenching is surprisingly found to play an even more important role in the PL quenching process than the dynamic one originating from a hole transfer from QDs to HTMs. The static quenching efficiency of the QDs with single CdS shells of 3 and 6 monolayers is much larger than that of the QDs with a multilayer CdS/CdZnS/ZnS shell. The experimental results are important for understanding the control of the static quenching pathways in QDs by using multishell structures.
Document type Article
Published at https://doi.org/10.1021/jp808190v
Permalink to this page
Back