Uniaxial strain effects on quantum materials probed by electronic transport

Our comprehension of electronic band structure, superconductivity, and non-trivial topology has been central to the development of the information age. Uniaxial strain can be used to explore the delicate connection between electronic band structure and the underlying crystal lattice, by breaking rotational symmetry and tuning lattice parameters without introducing impurities or defects. On top of that, all strain effects are fully reversible as long as the crystal stays within its elastic limit. This thesis explores how electronic transport can probe the effects of high magnetic fields and uniaxial strain on quantum materials. Chapter 1 provides an introductory description of quantum materials, uniaxial strain and quantum oscillations. Chapter 2 details uniaxial strain measurements and other techniques used in this research. Chapters 3, 5 and 6 describe uniaxial strain studies on a number of quantum materials probed by electronic transport. Chapter 4 describes the further characterization of the extremely high upper critical field of LaO_0.8F_0.2BiS_2-xSe_x. The work presented in this thesis aimed to add value to the foundation of uniaxial strain research, which is in its early stages. The ability to measure the electronic properties of crystals at higher strain values is desirable. With plenty of new and interesting physics still to be discovered, we firmly believe that uniaxial strain will continue to be an invaluable tuning parameter for the elucidation of emergent phenomena in quantum materials.