Graphene/Rh(111) structure studied using in-situ scanning tunneling microscopy

Authors
Publication date 11-2016
Journal Chinese Physics Letters
Article number 116101
Volume | Issue number 33 | 11
Number of pages 3
Organisations
  • Faculty of Science (FNWI) - Institute of Physics (IoP) - Van der Waals-Zeeman Institute (WZI)
Abstract

Scanning tunnel microscopy (STM) is performed to verify if an Rh 'nails' structure is formed accompanying the graphene growing during chemical vapor deposition. A structure of a graphene island in an Rh vacancy island is used as the start. While the graphene island is removed by oxygenation, the variations of the Rh vacancy island are imaged with an in-situ high-temperature STM. By fitting with our model and calculations, we conclude that the best fit is obtained for 0% Rh, i.e., for the complete absence of nails below graphene on Rh(111). That is, when graphene is formed on Rh(111), the substrate remains flat and does not develop a supporting nail structure.

Document type Article
Note Funding Information: Supported by the National Natural Science Foundation of China under Grant No 51402026, the Basic Research Program of Jiangsu Province under Grant No BK20130236, and the High Technology Research Key Laboratory of Changzhou under Grant No CM20133007. Publisher Copyright: © 2016 Chinese Physical Society and IOP Publishing Ltd.
Language English
Published at https://doi.org/10.1088/0256-307X/33/11/116101
Other links https://www.scopus.com/pages/publications/84995906246
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