Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN
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| Publication date | 2014 |
| Journal | Scientific Reports |
| Article number | 5235 |
| Volume | Issue number | 4 |
| Number of pages | 5 |
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| Abstract | We investigate photoluminescence of Eu-related emission in a GaN host consisting of thin layers grown by organometallic vapor-phase epitaxy. By comparing it with a reference sample of Eu-doped Y2O3, we find that the fraction of Eu3+ ions that can emit light upon optical excitation is of the order of 1%. We also measure the quantum yield of the Eu-related photoluminescence and find this to reach (~10%) and (~3%) under continuous wave and pulsed excitation, respectively. |
| Document type | Article |
| Language | English |
| Published at | https://doi.org/10.1038/srep05235 |
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Optical excitation
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