Optical spectroscopy of carrier relaxation processes in Si nanocrystals

Authors
Publication date 15-03-2009
Journal Materials Science and Engineering B-Advanced Functional Solid-State Materials
Volume | Issue number 159-160
Pages (from-to) 190-193
Organisations
  • Faculty of Science (FNWI) - Institute of Physics (IoP) - Van der Waals-Zeeman Institute (WZI)
Abstract We have investigated thermalization, trapping and recombination processes of carriers in Si nanocrystals embedded in a SiO2 matrix. The study has been performed using time-resolved optical techniques of photoluminescence and induced absorption, allowing for 17 ps and 150 fs resolution, respectively. Based on these results, the possible relaxation processes are discussed. Special attention is paid to cooperative processes circumventing the effect of phonon bottleneck theoretically expected for Si nanocrystals.
Document type Article
Note Part of special issue: EMRS 2008 Spring Conference Symposium K: Advanced Silicon Materials Research for Electronic and Photovoltaic Applications
Language English
Published at https://doi.org/10.1016/j.mseb.2008.10.042
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