Evolution of the spin-split quantum Hall states with magnetic field tilt in the InAs-based double quantum wells

Development of quantum Hall peculiarities due to mobility gap between spin-split magnetic levels with addition of the parallel magnetic field component B|| is analyzed in double quantum wells (DQW) created in InGaAs/GaAs and InAs/AlSb heterosystems chosen due to their relatively large bulk g-factors. In InGaAs/GaAs DQWs, the nonmonotonous behavior of these peculiarities is observed and explained within single-electron approach in terms of competition between enhanced spin splitting and localization of electrons in the layers of DQW with increased B||. In InAs/AlSb DQW, the tunneling connection between the layers is very weak due to high barrier, nevertheless the collective odd-numbered peculiarities are revealed that exist due to spontaneous interlayer phase coherence. B|| destroys these states that is manifested, in particular, in the suppression of the peculiarity for filling factor v = 3.