Annealing behavior of crystalline silicon heavily implanted with oxygen at low temperature
| Authors |
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|---|---|
| Publication date | 1997 |
| Host editors |
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| Book title | Shallow-Level Centers in Semiconductors |
| Pages (from-to) | 405-410 |
| Publisher | Singapore: World Scientific |
| Organisations |
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| Document type | Chapter |
| Language | English |
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