Influence of p-n junction formation at a Si/Si:Er interface on low temperature excitation of Er3+ ions in crystalline silicon

Authors
Publication date 2001
Journal Physical Review B
Volume | Issue number 64
Pages (from-to) 132202
Organisations
  • Faculty of Science (FNWI) - Institute of Physics (IoP) - Van der Waals-Zeeman Institute (WZI)
Document type Article
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