Scaling behavior of metal-insulator transitions in a Si/SiGe two dimensional hole gas

Authors
  • S.M. Olsthoorn
  • R. Fletcher
  • Y. Feng
  • P.T. Coleridge
  • R.L. Williams
  • J.C. Maan
Publication date 2002
Journal Physica E : Low-dimensial Systems & Nanostructures
Volume | Issue number 12 | 1-4
Pages (from-to) 600-603
Number of pages 4
Organisations
  • Faculty of Science (FNWI) - Institute of Physics (IoP) - Van der Waals-Zeeman Institute (WZI)
Abstract We report the temperature dependence of magnetotransport measurements in a Si/SiGe two-dimensional hole gas (2DHG) and we analyze the curves in terms of scaling. A reentrant insulating transition is observed at filling factor ν=1.5, followed by a second high field insulating phase at ν<1. A scaling behavior in temperature of the width of the longitudinal conductivity, its second derivative and the slope of the Hall conductivity has been observed, for both the transitions to the insulating state.
Document type Article
Note Proceedings of the Fourteenth International Conference on the Electronic Properties of Two-Dimensional Systems
Language English
Published at https://doi.org/10.1016/S1386-9477(01)00388-5
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