Compensation of decreased ion energy by increased hydrogen dilution in plasma deposition of thin film silicon solar cells at low substrate temperatures
Compensation of decreased ion energy by increased hydrogen dilution in plasma deposition of thin film silicon solar cells at low substrate temperatures
Materials Science and Engineering B-Advanced Functional Solid-State Materials
Event
European Materials Research Society (EMRS) Spring Meeting, Symposium K: Advanced silicon materials research for electronic and photovoltaic applications, Strasbourg, France
Volume | Issue number
159-160
Pages (from-to)
53-56
Organisations
Faculty of Science (FNWI) - Informatics Institute (IVI)
Abstract
In order to deposit thin film silicon solar cells on plastics and papers, the deposition process needs to be adapted for low deposition temperatures. In a very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) process, both the gas phase and the surface processes are affected by low process temperature. Using an electrostatic ion energy analyzer the effect of deposition temperature on the energies of ions reaching the substrate was measured. The ion energy decreases with decreasing temperature, but this can be compensated by diluting the silane source gas by hydrogen.
Document type
Article
Note
Verkerk2008a
Proceedings title: Proceedings of the European Materials Research Society Spring Meeting, Symposium K: Advanced silicon materials research for electronic and photovoltaic applications, Strasbourg, France
Publisher: Elsevier
Place of publication: Lausanne
Editors: S. Pizzini, G. Kissinger, H. Tu, H. Yamada-Kaneta
