Photoluminescence of Erbium-Doped Silicon: Excitation Power and Temperature Dependence

Authors
Publication date 2000
Journal Journal of Applied Physics
Volume | Issue number 88
Pages (from-to) 1443-1455
Number of pages 13
Organisations
  • Faculty of Science (FNWI) - Institute of Physics (IoP) - Van der Waals-Zeeman Institute (WZI)
Document type Article
Published at https://doi.org/10.1063/1.373837
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