Self-trapped exciton state in Si nanocrystals revealed by induced absorption

Authors
  • W.J. Buma ORCID logo
  • A. N. Poddubny
  • A.A. Prokofiev
  • I.N. Yassievich
Publication date 2012
Journal Physical Review B
Article number 161409
Volume | Issue number 85 | 16
Number of pages 5
Organisations
  • Faculty of Science (FNWI) - Van 't Hoff Institute for Molecular Sciences (HIMS)
  • Faculty of Science (FNWI) - Institute of Physics (IoP) - Van der Waals-Zeeman Institute (WZI)
Abstract We report results of time-resolved induced absorption (IA) spectroscopy on Si nanocrystals (Si NCs) embedded in a SiO2 matrix. In line with theoretical modeling, the IA amplitude decreases with probing photon energy, however only until a certain threshold value. For larger photon energies, an increase of IA is observed. This unexpected behavior is interpreted in terms of the self-trapped exciton state whose formation in Si NCs was put forward some time ago based on theoretical considerations. Here, we present a direct experimental confirmation of this supposition.
Document type Article
Language English
Published at https://doi.org/10.1103/PhysRevB.85.161409
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