Carrier multiplication in germanium nanocrystals
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| Publication date | 2015 |
| Journal | Light: Science & Applications |
| Article number | e251 |
| Volume | Issue number | 4 |
| Number of pages | 6 |
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| Abstract |
Carrier multiplication is demonstrated in a solid-state dispersion of germanium nanocrystals in a silicon-dioxide matrix. This is performed by comparing ultrafast photo-induced absorption transients at different pump photon energies below and above the threshold energy for this process. The average germanium nanocrystal size is approximately 5-6 nm, as inferred from photoluminescence and Raman spectra. A carrier multiplication efficiency of approximately 190% is measured for photo-excitation at 2.8 times the optical bandgap of germanium nanocrystals, deduced from their photoluminescence spectra.
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| Document type | Article |
| Note | With supplementary information |
| Language | English |
| Published at | https://doi.org/10.1038/lsa.2015.24 |
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Carrier multiplication in germanium nanocrystals
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