The Role of Shallow Bound States in Emission Processes of Rare-Earth Doped Semiconductors

Authors
Publication date 1998
Journal Physica Status Solidi. B: Basic Research
Volume | Issue number 210
Pages (from-to) 737-745
Organisations
  • Faculty of Science (FNWI) - Institute of Physics (IoP) - Van der Waals-Zeeman Institute (WZI)
Document type Article
Published at https://doi.org/10.1002/(SICI)1521-3951(199812)210:2<737::AID-PSSB737>3.0.CO;2-9
Permalink to this page
Back