Terahertz electromagnetic transitions observed within the 4I15/2 ground multiplet of Er3+ ions in Si

Terahertz electromagnetic transitions observed within the ⁴I_15/2 ground multiplet of Er³⁺ ions in Si

Authors	S. Minissale N.Q. Vinh A.F.G. van der Meer M.S. Bresler T. Gregorkiewicz
Publication date	15-03-2009
Journal	Physical Review B
Article number	115324
Volume \| Issue number	79 \| 11
Number of pages	5
Organisations	Faculty of Science (FNWI) - Institute of Physics (IoP) - Van der Waals-Zeeman Institute (WZI)
Abstract	An optically induced terahertz transition within the crystal-field-split ground state of Er³⁺ ion in Si has been conclusively established. A Si/Si:Er multinanolayer structure, where a single type of Er-related centers dominates, has been used. The study was conducted by pump-probe technique with a free-electron laser. Using the transient grating experimental configuration, we identify an absorption band at λ≈43.5 μm and measure the related effective lifetime as τ≈50 ps.
Document type	Article
Note	©2009 American Physical Society
Language	English
Published at	https://doi.org/10.1103/PhysRevB.79.115324
Downloads	PhysRevB.79 (Final published version)
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