Investigating photoluminescence quantum yield of silicon nanocrystals formed in SiOx with different initial Si excess

Authors
Publication date 2015
Host editors
  • O.V. Sulima
  • G. Conibeer
Book title Next Generation Technologies for Solar Energy Conversion VI
Book subtitle 10-12 August 2015, San Diego, California, United States
ISBN
  • 9781628417289
Series Proceedings of the SPIE
Event Next Generation Technologies for Solar Energy Conversion VI
Article number 95620O
Number of pages 6
Publisher Bellingham, WA: SPIE
Organisations
  • Faculty of Science (FNWI) - Institute of Physics (IoP) - Van der Waals-Zeeman Institute (WZI)
  • Faculty of Science (FNWI) - Institute of Physics (IoP)
Abstract Optical properties of silicon nanocrystals dispersed in SiO2 matrix were investigated in terms of photoluminescence quantum yield at room temperature. Two multilayer samples, prepared from substoichiometric silicon oxide layers by annealing at 1150°C were used to investigate the influence of Si concentration. Significant reduction of photoluminescence quantum yield and a very specific change of its excitation energy dependence upon variation of silicon excess are concluded from the experimental data. Possible mechanisms leading to these changes are discussed.
Document type Conference contribution
Language English
Published at https://doi.org/10.1117/12.2191105
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