The Photoluminescence Mechanism of Erbium in Silicon: Intensity Dependence on Excitation Power and Temperature,

Authors
Publication date 1999
Journal Physica B-Condensed Matter
Volume | Issue number 273-274
Pages (from-to) 338-341
Organisations
  • Faculty of Science (FNWI) - Institute of Physics (IoP) - Van der Waals-Zeeman Institute (WZI)
Document type Article
Published at https://doi.org/10.1016/S0921-4526(99)00471-8
Permalink to this page
Back